PSP Model Equations Extension for Statistical Estimation of Leakage Current in Nanometer CMOS Technologies Considering Process Variations

A novel analytical extension to the PSP transistor model is proposed for static leakage estimation of CMOS circuits considering statistical process variations. Probability equations are inserted directly into the PSP transistor model. Since those equations are completely generic, the proposed methodology is straightforwardly applicable to any technology node. The extended PSP model has been tested and compared to extensive Monte-Carlo simulations of CMOS circuit blocks having transistor's gate length of 45nm (STMicroelectronics technology). The results show that the methodology is accurate in estimating the shape of the probability distribution and the mean value of the leakage current (error smaller than 2%), reducing at least by a factor of a hundred the computational effort required for a Monte-Carlo analysis.